J. Takeda, S. Sano, and H. Taguchi "Characteristics of Crystal Defects due to the Inverse Piezoelectric Effect in Aluminum Gallium Nitride / Gallium Nitride High Electron Mobility Transistors", Advances in Science, Technology and Engineering Systems Journal, vol. 10, no. 3, pp. 9–14, 2025, doi: 10.25046/aj100302.