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Author/Affiliation: Hirohisa Taguchi
Characteristics of Crystal Defects due to the Inverse Piezoelectric Effect in Aluminum Gallium Nitride / Gallium Nitride High Electron Mobility Transistors
Gallium nitride (GaN) is expected to be used as a material for power semiconductor devices. However, it is crucial to focus on the dielectric properties of GaN. In this study, we investigated the transient response of the drain current during high-frequency application after intentionally maintaining the current collapse in the AlGaN/GaN high electron mobility transistors.…
Read More Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs
In this study, a theoretical simulation was performed using the Schrodinger-Poisson method to elucidate the formation factors for two-dimensional electron gas in InGaAs-based HEMTs. No visible change was observed in the carrier density and the potential shape. The inflection point of the energy level and the agreement of the energy level in each dimension were…
Read More Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors
Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT…
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