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Author/Affiliation: Itsuki TakagiOpen AccessArticle
9 Pages, 2,132 KB 
Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs
Abstract:
In this study, a theoretical simulation was performed using the Schrodinger-Poisson method to elucidate the formation factors for two-dimensional electron gas in InGaAs-based HEMTs. No visible change was observed in the carrier density and the potential shape. The inflection point of the energy level and the agreement of the energy level in each dimension were…
Read More(This article belongs to Section Electrical Engineering (ELE))