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Author/Affiliation: Junya TakedaOpen AccessArticle
6 Pages, 2,195 KB 
Characteristics of Crystal Defects due to the Inverse Piezoelectric Effect in Aluminum Gallium Nitride / Gallium Nitride High Electron Mobility Transistors
Abstract:
Gallium nitride (GaN) is expected to be used as a material for power semiconductor devices. However, it is crucial to focus on the dielectric properties of GaN. In this study, we investigated the transient response of the drain current during high-frequency application after intentionally maintaining the current collapse in the AlGaN/GaN high electron mobility transistors.…
Read More(This article belongs to Section Electronic Engineering (EEE))