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Author/Affiliation: Koji Fujisaki

SiC-FET Gas Sensor for Detecting Sub-ppm Gas Concentrations

by Yoshitaka Sasago, Hitoshi Nakamura, Takahiro Odaka, Atsushi Isobe, Shigenobu Komatsu, Yohei Nakamura, Taizo Yamawaki, Chiko Yorita, Nobuyuki Ushifusa, Kohei Yoshikawa, Kazuo Ono, Yumiko Anzai, Shuntaro Machida, Masaharu Kinoshita, Koji Fujisaki, Kenji Okishiro and Yuta Sugiyama

Advances in Science, Technology and Engineering Systems Journal, Volume 5, Issue 1, Page # 151–158, 2020; DOI: 10.25046/aj050120

Abstract:

This paper describes a silicon carbide-field effect transistor (SiC-FET) gas sensor that is able to detect NO, O2, NH3, CO, and SO2. The gate of the sensor FET is a gas detection layer that consists of yttria-stabilized zirconia, nickel oxide, and platinum. The threshold voltages of the sensor depend on the target gas concentration, measurement…