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Author/Affiliation: Suchismita Sen
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5 Pages, 1,260 KB Download PDF

Characterization and Investigating the Effect of Gate-Insulator Thickness on Co-Axial Cylindrical Carbon Nanotube Field Effect Transistor

Advances in Science, Technology and Engineering Systems Journal, Volume 8, Issue 1, Page # 12–16, 2023; DOI: 10.25046/aj080102
Abstract:

Carbon nanotube field effect transistor (CNTFET) has a huge advantage over the Si- MOSFET. In MOSFET switching occurs by altering channel resistivity whereas in CNTFET switching occurs by modulation contact resistance. CNTFET generates three to four times of drive current than MOSFET. Transconductance of CNTFET is four times higher than the MOSFET. The average carrier…

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(This article belongs to the SP14 (Special Issue on Computing, Engineering and Multidisciplinary Sciences 2022-23) & Section Electronic Engineering (EEE))

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