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4 Pages, 585 KB 
Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors
Abstract:
Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT…
Read More(This article belongs to the SP5 (Special Issue on Multidisciplinary Sciences and Engineering 2018) & Section Electronic Engineering (EEE))
Open AccessArticle
9 Pages, 2,132 KB
Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs
Abstract:
In this study, a theoretical simulation was performed using the Schrodinger-Poisson method to elucidate the formation factors for two-dimensional electron gas in InGaAs-based HEMTs. No visible change was observed in the carrier density and the potential shape. The inflection point of the energy level and the agreement of the energy level in each dimension were…
Read More(This article belongs to Section Electrical Engineering (ELE))