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Keyword: Heterojunction
NiO Quantum dots Doped Triple Cation Perovskite \(\mathrm{CsMAFAPbI_2Br_2}\) Heterojunction Photodetector with High Responsivity
Optoelectronic devices applications based on Organic–inorganic perovskites are promising and effective low-cost energy materials due to their exceptional physical properties which include high carrier mobility, high optical absorption coefficient, and long carrier diffusion length. In the presented work, a TiO2/NiO+5% Fe quantum dots (QDs)–doped CsMAFAPbI2Br2 perovskite heterojunction broadband photodetector was fabricated on FTO/glass substrate. The…
Read More Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors
Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT…
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