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Keyword: InGaAsOpen AccessArticle
9 Pages, 2,132 KB 
Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs
Abstract:
In this study, a theoretical simulation was performed using the Schrodinger-Poisson method to elucidate the formation factors for two-dimensional electron gas in InGaAs-based HEMTs. No visible change was observed in the carrier density and the potential shape. The inflection point of the energy level and the agreement of the energy level in each dimension were…
Read More(This article belongs to Section Electrical Engineering (ELE))
Open AccessArticle
9 Pages, 1,504 KB
On The Development of a Reliable Gate Stack for Future Technology Nodes Based on III-V Materials
Abstract:
In this work, we discuss how the insertion of a LaSiOx layer in between an in-house IL passivation layer and the high-k has moved the III-V gate stack into the target window for future technology nodes. The insertion of this LaSiOx layer in the gate stack has reduced the Dit and Nbt below the target…
Read More(This article belongs to the SP5 (Special Issue on Multidisciplinary Sciences and Engineering 2018) & Section Electronic Engineering (EEE))