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Keyword: Quantum Well
Hole-Confined Polar Optical Phonon Interaction in \(\mathrm{Al_{0.35}Ga_{0.65}As/GaAs/Al_{0.25}Ga_{0.75}As}\) Quantum Wells
In Al0.35Ga0.65As/GaAs/Al0.25Ga0.75As quantum wells, the hole-confined polar optical phonon interaction is investigated. To calculate the valence band structure, we use the Luttinger-Kohn Hamiltonian with the k.p method. Within the dielectric continuum model, the hole-confined phonon scattering rates of intrasubband heavy holes in quantum well are calculated. It is found that the scattering rates are governed…
Read More Efficiency Enhancement of p-i-n Solar Cell Embedding Quantum Wires in the Intrinsic Layer
A high efficiency InAs/GaAs quantum wire solar cell is modelled embedding periodic array of InAs quantum wires (QW) in the intrinsic layer. The promising low dimensional heterostructure such as Quantum Wells, Quantum Wires, Quantum Dots or Dashed (elongated Dots) based intermediate-band-gap solar cells are recently being grasped the attention for ongoing third generation solar cell…
Read More High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application
A systematic study of wide bandgap (WBG) based light emitting diodes (LEDs) and photodiodes (PDs) were conducted for the assessment of modular integration of optoelectronic devices into power modules. The temperature dependence of the photoluminescence (PL) efficiency of Indium gallium nitride/Gallium nitride (InGaN/GaN) multiple quantum wells (MQWs) material was studied from 10 to 800 K.…
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