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Keyword: SRAM
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Open AccessArticle
7 Pages, 1,113 KB Download PDF

COTS – Harsh Condition Effects Considerations from Technology to User Level

Advances in Science, Technology and Engineering Systems Journal, Volume 2, Issue 3, Page # 1592–1598, 2017; DOI: 10.25046/aj0203198
Abstract:

Radiation hardened devices are mostly extremely expensive. The continuously downscaling of microelectronic structures and the unavoidable presence of particle radiation on ground and in space leads to unwanted failures in electronic devices. Furthermore it is expected that in the next few years around 8000 new satellites will be launched around the world. Due to the…

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(This article belongs to the SP3 (Special issue on Recent Advances in Engineering Systems 2017) & Section Electronic Engineering (EEE))
Open AccessArticle
11 Pages, 7,389 KB Download PDF

IGS: The Novel Fast IC Power Ground Network Optimization Flow Based on Improved Gauss-Seidel Method

Advances in Science, Technology and Engineering Systems Journal, Volume 2, Issue 3, Page # 711–721, 2017; DOI: 10.25046/aj020391
Abstract:

With silicon technology further scaling, the switching activities together with GHz operation frequency greatly affects the power integrity by generating large IR-drop noises. Excessive IR-drop causes functional failures such as timing failure, abnormal reset and SRAM flipping. The PGN needs to be optimized to reduce IR-drop. The traditional EDA optimization routine repeats the steps such…

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(This article belongs to the SP3 (Special issue on Recent Advances in Engineering Systems 2017) & Section Electronic Engineering (EEE))

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