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Author/Affiliation: Pierre CanetOpen AccessArticle
7 Pages, 1,166 KB 
Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories
Abstract:
In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability. Indeed, common problems with ReRAM are related to high variability in operating conditions and low yield. At a cell level ReRAMs suffer from variability. At an array level,…
Read More(This article belongs to the Special issue on Advancement in Engineering Technology 2017-18 & Section Electronic Engineering (EEE))