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Author/Affiliation: Stanley Atcitty
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6 Pages, 1,188 KB Download PDF

High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application

Advances in Science, Technology and Engineering Systems Journal, Volume 4, Issue 2, Page # 17–22, 2019; DOI: 10.25046/aj040203
Abstract:

A systematic study of wide bandgap (WBG) based light emitting diodes (LEDs) and photodiodes (PDs) were conducted for the assessment of modular integration of optoelectronic devices into power modules. The temperature dependence of the photoluminescence (PL) efficiency of Indium gallium nitride/Gallium nitride (InGaN/GaN) multiple quantum wells (MQWs) material was studied from 10 to 800 K.…

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(This article belongs to the SP6 (Special Issue on Recent Advances in Engineering Systems 2018-19) & Section Optics (OPT))

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