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Author/Affiliation: Takuma ShimazuOpen AccessArticle
4 Pages, 585 KB 
Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors
Abstract:
Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT…
Read More(This article belongs to the Special Issue on Multidisciplinary Sciences and Engineering 2018 & Section Electronic Engineering (EEE))