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Keyword: MOSFET
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Open AccessArticle
19 Pages, 1,572 KB Download PDF

A Circuit Designer’s Perspective to MOSFET Behaviour: Common Questions and Practical Insights

Advances in Science, Technology and Engineering Systems Journal, Volume 8, Issue 4, Page # 41–59, 2023; DOI: 10.25046/aj080406
Abstract:

Metal Oxide Semiconductor Field-Effect Transistors are commonly taught in courses for electrical engineers as they are the most common components within integrated circuits. However, despite numerous papers and books on MOSFETs, students still struggle with understanding their behaviour, particularly in the saturation region. This paper presents an expanded explanation of MOSFET behaviour, with a consistent…

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(This article belongs to the SP14 (Special Issue on Computing, Engineering and Multidisciplinary Sciences 2022-23) & Section Electronic Engineering (EEE))
Open AccessArticle
6 Pages, 932 KB Download PDF

Comparison of the RC-Triggered MOSFET-Based ESD Clamp Circuits for an Ultra-low Power Sensor System

Advances in Science, Technology and Engineering Systems Journal, Volume 5, Issue 2, Page # 718–723, 2020; DOI: 10.25046/aj050289
Abstract:

This paper uses the RC-triggered MOSFET-based electrostatic discharge (ESD) power clamp to conduct ESD from ESD events and not affect the ultra-low power sensor system. Then using the stacked device include stacked MOSFET or stacked BJT to reduce the leakage current which increases with temperature. Moreover, we compare gate-driven method and two-level–driven with both gate-driven…

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(This article belongs to Section Electronic Engineering (EEE))
Open AccessArticle
5 Pages, 1,260 KB Download PDF

Characterization and Investigating the Effect of Gate-Insulator Thickness on Co-Axial Cylindrical Carbon Nanotube Field Effect Transistor

Advances in Science, Technology and Engineering Systems Journal, Volume 8, Issue 1, Page # 12–16, 2023; DOI: 10.25046/aj080102
Abstract:

Carbon nanotube field effect transistor (CNTFET) has a huge advantage over the Si- MOSFET. In MOSFET switching occurs by altering channel resistivity whereas in CNTFET switching occurs by modulation contact resistance. CNTFET generates three to four times of drive current than MOSFET. Transconductance of CNTFET is four times higher than the MOSFET. The average carrier…

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(This article belongs to the SP14 (Special Issue on Computing, Engineering and Multidisciplinary Sciences 2022-23) & Section Electronic Engineering (EEE))
Open AccessArticle
14 Pages, 2,270 KB Download PDF

Improving of Heat Spreading in a SiC Propulsion Inverter using Graphene Assembled Films

Advances in Science, Technology and Engineering Systems Journal, Volume 6, Issue 6, Page # 98–111, 2021; DOI: 10.25046/aj060614
Abstract:

The focus of this work is first to establish the effect of the chip temperature and thermal feedback on the determination of the power loss in a three-phase propulsion inverter, then to demonstrate the possibility of achieving an improved heat spreading through the different layers inside a SiC power module by using graphene assembled films…

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(This article belongs to the SP11 (Special Issue on Innovation in Computing, Engineering Science & Technology 2021) & Section Electronic Engineering (EEE))
Open AccessArticle
5 Pages, 862 KB Download PDF

Low Power Bulk Driven Series Parallel OTA for Low Frequency Applications

Advances in Science, Technology and Engineering Systems Journal, Volume 5, Issue 5, Page # 69–73, 2020; DOI: 10.25046/aj050510
Abstract:

Low power OTAs are the most preferred circuits in the realization of continuous time filters of analog front end of wearable healthcare devices. A low transconductance OTA with series parallel current mirror to realize large time constant of the filter is designed. The differential pair of the OTA uses bulk driven PMOSFETs and the subthreshold…

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(This article belongs to the SP9 (Special Issue on Multidisciplinary Innovation in Engineering Science & Technology 2020) & Section Electronic Engineering (EEE))
Open AccessArticle
7 Pages, 2,062 KB Download PDF

Enabling 3D Heterogeneous Structures Towards Smart Chips: A Review

Advances in Science, Technology and Engineering Systems Journal, Volume 5, Issue 1, Page # 267–273, 2020; DOI: 10.25046/aj050134
Abstract:

This review paper discusses recent research outcomes of fabricating three-dimensional (3D) heterogeneous structures in complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) technologies to enable smart future chips. The CMOS-based 3D heterogeneous structures demonstrated are vertical magnetic-cored inductors for radio-frequency (RF) ICs, through-back-end-of-line (BEOL) metal wall structures for global flying noise isolation, above-IC nano crossbar array electrostatic…

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(This article belongs to the SP8 (Special Issue on Multidisciplinary Sciences and Engineering 2019-20) & Section Electronic Engineering (EEE))
Open AccessArticle
9 Pages, 1,504 KB Download PDF

On The Development of a Reliable Gate Stack for Future Technology Nodes Based on III-V Materials

Advances in Science, Technology and Engineering Systems Journal, Volume 3, Issue 5, Page # 36–44, 2018; DOI: 10.25046/aj030506
Abstract:

In this work, we discuss how the insertion of a LaSiOx layer in between an in-house IL passivation layer and the high-k has moved the III-V gate stack into the target window for future technology nodes. The insertion of this LaSiOx layer in the gate stack has reduced the Dit and Nbt below the target…

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(This article belongs to the SP5 (Special Issue on Multidisciplinary Sciences and Engineering 2018) & Section Electronic Engineering (EEE))

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