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Keyword: MOSFETA Circuit Designer’s Perspective to MOSFET Behaviour: Common Questions and Practical Insights
Metal Oxide Semiconductor Field-Effect Transistors are commonly taught in courses for electrical engineers as they are the most common components within integrated circuits. However, despite numerous papers and books on MOSFETs, students still struggle with understanding their behaviour, particularly in the saturation region. This paper presents an expanded explanation of MOSFET behaviour, with a consistent…
Read MoreComparison of the RC-Triggered MOSFET-Based ESD Clamp Circuits for an Ultra-low Power Sensor System
This paper uses the RC-triggered MOSFET-based electrostatic discharge (ESD) power clamp to conduct ESD from ESD events and not affect the ultra-low power sensor system. Then using the stacked device include stacked MOSFET or stacked BJT to reduce the leakage current which increases with temperature. Moreover, we compare gate-driven method and two-level–driven with both gate-driven…
Read MoreCharacterization and Investigating the Effect of Gate-Insulator Thickness on Co-Axial Cylindrical Carbon Nanotube Field Effect Transistor
Carbon nanotube field effect transistor (CNTFET) has a huge advantage over the Si- MOSFET. In MOSFET switching occurs by altering channel resistivity whereas in CNTFET switching occurs by modulation contact resistance. CNTFET generates three to four times of drive current than MOSFET. Transconductance of CNTFET is four times higher than the MOSFET. The average carrier…
Read MoreImproving of Heat Spreading in a SiC Propulsion Inverter using Graphene Assembled Films
The focus of this work is first to establish the effect of the chip temperature and thermal feedback on the determination of the power loss in a three-phase propulsion inverter, then to demonstrate the possibility of achieving an improved heat spreading through the different layers inside a SiC power module by using graphene assembled films…
Read MoreLow Power Bulk Driven Series Parallel OTA for Low Frequency Applications
Low power OTAs are the most preferred circuits in the realization of continuous time filters of analog front end of wearable healthcare devices. A low transconductance OTA with series parallel current mirror to realize large time constant of the filter is designed. The differential pair of the OTA uses bulk driven PMOSFETs and the subthreshold…
Read MoreEnabling 3D Heterogeneous Structures Towards Smart Chips: A Review
This review paper discusses recent research outcomes of fabricating three-dimensional (3D) heterogeneous structures in complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) technologies to enable smart future chips. The CMOS-based 3D heterogeneous structures demonstrated are vertical magnetic-cored inductors for radio-frequency (RF) ICs, through-back-end-of-line (BEOL) metal wall structures for global flying noise isolation, above-IC nano crossbar array electrostatic…
Read MoreOn The Development of a Reliable Gate Stack for Future Technology Nodes Based on III-V Materials
In this work, we discuss how the insertion of a LaSiOx layer in between an in-house IL passivation layer and the high-k has moved the III-V gate stack into the target window for future technology nodes. The insertion of this LaSiOx layer in the gate stack has reduced the Dit and Nbt below the target…
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