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Keyword: Transient response
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Open AccessArticle
8 Pages, 1,435 KB Download PDF

Transient Response & Electromagnetic Behaviour of Flexible Bow-Tie Shaped Chip-less RFID Tag for General IoT Applications

Advances in Science, Technology and Engineering Systems Journal, Volume 5, Issue 5, Page # 757–764, 2020; DOI: 10.25046/aj050592
Abstract:

This paper is an extension of Novel Flexible Chip-less Bow-Tie RFID tag in which we presented the design, testing and fabrication of the tag and compared the results with Octagonal Chipless RFID tag. The chipless RFID tag was designed by using simulation software CST microwave studio and fabricated by using laser etching technique on a…

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(This article belongs to the SP9 (Special Issue on Multidisciplinary Innovation in Engineering Science & Technology 2020) & Section Electronic Engineering (EEE))
Open AccessArticle
4 Pages, 585 KB Download PDF

Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors

Advances in Science, Technology and Engineering Systems Journal, Volume 3, Issue 5, Page # 216–219, 2018; DOI: 10.25046/aj030526
Abstract:

Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT…

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(This article belongs to the SP5 (Special Issue on Multidisciplinary Sciences and Engineering 2018) & Section Electronic Engineering (EEE))
Open AccessArticle
6 Pages, 2,195 KB Download PDF

Characteristics of Crystal Defects due to the Inverse Piezoelectric Effect in Aluminum Gallium Nitride / Gallium Nitride High Electron Mobility Transistors

Advances in Science, Technology and Engineering Systems Journal, Volume 10, Issue 3, Page # 9–14, 2025; DOI: 10.25046/aj100302
Abstract:

Gallium nitride (GaN) is expected to be used as a material for power semiconductor devices. However, it is crucial to focus on the dielectric properties of GaN. In this study, we investigated the transient response of the drain current during high-frequency application after intentionally maintaining the current collapse in the AlGaN/GaN high electron mobility transistors.…

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(This article belongs to Section Electronic Engineering (EEE))
Open AccessArticle
6 Pages, 648 KB Download PDF

Low Power Fast Settling Switched Capacitor PTAT Current Reference Circuit for Low Frequency Applications

Advances in Science, Technology and Engineering Systems Journal, Volume 5, Issue 6, Page # 865–870, 2020; DOI: 10.25046/aj0506103
Abstract:

This paper presents a low voltage, low power, fast settling switched capacitor based Proportional to Absolute Temperature (PTAT) current reference circuit. Unlike in a conventional resistor based PTAT current source, the proposed circuit saves a significant amount of silicon area on chip and hence the circuit becomes less susceptible to process variations. It creates a…

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(This article belongs to the SP9 (Special Issue on Multidisciplinary Innovation in Engineering Science & Technology 2020) & Section Electronic Engineering (EEE))
Open AccessArticle
11 Pages, 1,013 KB Download PDF

Real-Time Flux-weakening Control for an IPMSM Drive System Using a Predictive Controller

Advances in Science, Technology and Engineering Systems Journal, Volume 2, Issue 6, Page # 76–86, 2017; DOI: 10.25046/aj020610
Abstract:

This paper proposes extended-range high-speed control for an IPMSM drive system. A simple real-time tuning flux-weakening control algorithm is proposed and implemented to control an IPMSM drive system in a wide variable speed range, from 3 r/min up to 2700 r/min. This flux-weakening control algorithm does not require any motor parameters and only needs simple…

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(This article belongs to the SP4 (Special issue on Advancement in Engineering Technology 2017-18) & Section Automation & Control Systems (ACS))

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