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Author/Affiliation: Pavel VojtekOpen AccessArticle
4 Pages, 637 KB 
Photoluminescence Investigation of Inhomogeneous Porous P-type Si
Abstract:
Photoluminescence (PL) of inhomogeneous porous silicon (PS) of p-type is investigated in this contribution. We measured the PL signal at equidistant positions separated by 0.05 mm in area localized between original crystalline Si (c-Si) wafer surface and electrochemically prepared PS layer. Two PL peaks localized at energies 1.8 and 1.9 eV were identified and their…
Read More(This article belongs to the SP7 (Special Issue on Advancement in Engineering and Computer Science 2019) & Section Multidisciplinary Materials Science (MMU))