Metal (silver)-Assisted Chemical Etching (MACE) method is used to fabricate silicon nanostructures like silicon nanowires (SiNWs) and silicon nanocones (SiNCs). The morphological characterization of fabricated SiNWs has shown that 5 minutes is the optimal time of silver deposition on silicon substrate. Silicon nanocones (SiNCs) were also fabricated by etching vertical SiNWs with a AgNO3=HF=H2O2 solution.…

Through-Silicon-Vias (TSVs) are utilized for high density 3D integration, which induce crosstalk problems and impact signal integrity. This paper focuses on TSV crosstalk characterization in 3D integrated circuits, where several TSV physical and environmental configurations are investigated. In particular, this work shows a detailed study on the influence of signal-ground TSV locations, distances and their…