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Keyword: Electrical Characterization
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Open AccessArticle
5 Pages, 1,017 KB Download PDF

Morphological and Optoelectrical Characterization of Silicon Nanostructures for Photovoltaic Applications

Advances in Science, Technology and Engineering Systems Journal, Volume 4, Issue 1, Page # 45–49, 2019; DOI: 10.25046/aj040106
Abstract:

Metal (silver)-Assisted Chemical Etching (MACE) method is used to fabricate silicon nanostructures like silicon nanowires (SiNWs) and silicon nanocones (SiNCs). The morphological characterization of fabricated SiNWs has shown that 5 minutes is the optimal time of silver deposition on silicon substrate. Silicon nanocones (SiNCs) were also fabricated by etching vertical SiNWs with a AgNO3=HF=H2O2 solution.…

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(This article belongs to the SP6 (Special Issue on Recent Advances in Engineering Systems 2018-19) & Section Multidisciplinary Materials Science (MMU))
Open AccessArticle
6 Pages, 1,518 KB Download PDF

Impact of Crosstalk on Signal Integrity of TSVs in 3D Integrated Circuits

Advances in Science, Technology and Engineering Systems Journal, Volume 3, Issue 1, Page # 109–114, 2018; DOI: 10.25046/aj030113
Abstract:

Through-Silicon-Vias (TSVs) are utilized for high density 3D integration, which induce crosstalk problems and impact signal integrity. This paper focuses on TSV crosstalk characterization in 3D integrated circuits, where several TSV physical and environmental configurations are investigated. In particular, this work shows a detailed study on the influence of signal-ground TSV locations, distances and their…

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(This article belongs to the SP4 (Special issue on Advancement in Engineering Technology 2017-18) & Section Electronic Engineering (EEE))

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