The one-dimensional form of some types of differential equations that appear in the modeling of solid-state devices, like, e.g., the Poisson and Schro¨ dinger equations, can be solved numerically using the Numerov Process (NP). The accuracy of NP is superior by at least two orders of magnitude to that of commonly-used solution methods like, e.g.,…

In this paper, behavioral approach has been adopted for the calculation of total power losses that has been further used to derive an analytical model for the conduction and switching losses in a boost Power Factor Correction (PFC) stage of an On-board Charger (OBC). Detailed investigation of power losses can help in finding out ways…

Gallium nitride (GaN) is expected to be used as a material for power semiconductor devices. However, it is crucial to focus on the dielectric properties of GaN. In this study, we investigated the transient response of the drain current during high-frequency application after intentionally maintaining the current collapse in the AlGaN/GaN high electron mobility transistors.…

Metal Oxide Semiconductor Field-Effect Transistors are commonly taught in courses for electrical engineers as they are the most common components within integrated circuits. However, despite numerous papers and books on MOSFETs, students still struggle with understanding their behaviour, particularly in the saturation region. This paper presents an expanded explanation of MOSFET behaviour, with a consistent…

Due to the variations in weather conditions, photovoltaic systems adopt a technique based on maximum power point tracking to extract the maximal power of the solar module. In the literature, there are many different methods classical and intelligent of maximum power point tracking (MPPT). But, due to the semiconductor effect, the current-voltage characteristics of the…

In Al0.35Ga0.65As/GaAs/Al0.25Ga0.75As quantum wells, the hole-confined polar optical phonon interaction is investigated. To calculate the valence band structure, we use the Luttinger-Kohn Hamiltonian with the k.p method. Within the dielectric continuum model, the hole-confined phonon scattering rates of intrasubband heavy holes in quantum well are calculated. It is found that the scattering rates are governed…

Gate driver has been applied in many ways, exemplified by that, by using the DC-isolated and AC-pass characteristics of gate driver’s primary and secondary sides, the problem of floating endpoint in semiconductor power switch can be solved. However, the conventional design of isolated gate driver provides circuit voltage blocking by optically coupled components. Due to…

In this paper, a modified configuration of Single-Phase Seven-Level Packed U-Cell (PUC) Multilevel Inverter for solar photovoltaic system is presented & investigated for standalone operation. The Seven-Level MPUC Inverter comprises of six semiconductor switches & two DC links which generates seven voltage levels at the inverter output. The maximum amplitude of inverter output voltage is…

This paper is an extension of work originally presented in IPFA 2019. In the original work, a new memory bit-counting method in physical failure analysis (PFA) using laser deprocessing technique (LDT) is introduced. In the present paper, LDT will be further exploited and the methodology applied to PFA will be fully discussed. Compared to the…

As manufacturing efficiency has become a main focus of today’s business, it is very critical to surge the throughput by developing different test strategies. With throughput, testing cost also has been recognized as the major challenge in the future of leading semiconductors. Reducing test time is a significant effort to maximize throughput as the complexity…

Oscillator phase noise (PN) has a strong impact on the spectral purity of the RF signal in wireless systems and is, therefore, a main challenge when designing a local oscillator. In this paper, we propose a new approach for designing a low PN oscillator based on the Time-Invariant Linear Model of phase noise. It leads…

This review paper discusses recent research outcomes of fabricating three-dimensional (3D) heterogeneous structures in complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) technologies to enable smart future chips. The CMOS-based 3D heterogeneous structures demonstrated are vertical magnetic-cored inductors for radio-frequency (RF) ICs, through-back-end-of-line (BEOL) metal wall structures for global flying noise isolation, above-IC nano crossbar array electrostatic…

High gain-bandwidth product and visible/UV contrast photodetectors are vital in Visible Light Communication (VLC) and Ultraviolet (UV) reflectance imaging applications respectively. We adopt material and structural optimization to perceive such photodetectors with back-illuminated Optical Field Effect Transistor (OPFET) wherein any potential difference in absorption coefficient of the semiconductor material between the visible and the UV…

Driven by today’s market demand, semiconductor is pushing towards the zero-defect direction. The improvement demanded in semiconductor manufacturing is becoming increasingly challenging. In this paper, common molding defects comprise of voids, incomplete fills, and piping holes are studied systematically, focusing on three key areas: 1) Potential mold flow weakness; 2) Molding temperature stability; as well…

Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT…

With the increasing integration level of electronic circuits management of the generated heat became one of the most important design aspects. Beside the semiconductor components capacitors are also affected by the elevated temperature. In this paper a new thermal characterization method is proposed adopting the thermal transient measurement technique for capacitors utilizing the capacitance itself…